RM8N650LD-T

型号
RM8N650LD-T
制造商
Rectron
分类
MOSFET
RoHS
数据表
描述
MOSFET D-PAK MOSFET

产品规格

制造商
Rectron
分类
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Pd - Power Dissipation
80 W
Qg - Gate Charge
22 nC
Rds On - Drain-Source Resistance
540 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

最新评价

fast delivery, item as described, thanks!!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Works. Find the price of this product is very good

fast delivery

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

RM8N 相关的关键词

  • RM8N650LD-T 集成
  • RM8N650LD-T RoHS
  • RM8N650LD-T PDF
  • RM8N650LD-T 数据表
  • RM8N650LD-T 型号
  • RM8N650LD-T 购买
  • RM8N650LD-T 分销商
  • RM8N650LD-T PDF
  • RM8N650LD-T 零件
  • RM8N650LD-T 集成电路
  • RM8N650LD-T 下载PDF
  • RM8N650LD-T 下载数据表
  • RM8N650LD-T 供应
  • RM8N650LD-T 供应商
  • RM8N650LD-T 价钱
  • RM8N650LD-T 数据表
  • RM8N650LD-T 图片
  • RM8N650LD-T 图片
  • RM8N650LD-T 库存
  • RM8N650LD-T 现货
  • RM8N650LD-T 原厂
  • RM8N650LD-T 最便宜
  • RM8N650LD-T 优秀
  • RM8N650LD-T 无铅
  • RM8N650LD-T 规格
  • RM8N650LD-T 热门优惠
  • RM8N650LD-T 阶梯价格
  • RM8N650LD-T 技术资料