型号 HUF76609D3ST 制造商 onsemi / Fairchild 分类 MOSFET RoHS 数据表 HUF76609D3ST 描述 MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
制造商 onsemi / Fairchild 分类 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 49 W Qg - Gate Charge 16 nC Rds On - Drain-Source Resistance 130 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 3 V