型号 TN0106N3-G-P013 制造商 Microchip Technology 分类 MOSFET RoHS 数据表 TN0106N3-G-P013 描述 MOSFET N-CH Enhancmnt Mode MOSFET
制造商 Microchip Technology 分类 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 350 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Ammo Pack Pd - Power Dissipation 1 W Qg - Gate Charge - Rds On - Drain-Source Resistance 3 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V