型号 IXFX120N65X2 制造商 IXYS 分类 MOSFET RoHS 数据表 IXFX120N65X2 描述 MOSFET MOSFET 650V/120A Ultra Junction X2
制造商 IXYS 分类 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 120 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 1.25 kW Qg - Gate Charge 225 nC Rds On - Drain-Source Resistance 24 mOhms Technology SI Tradename HiPerFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.7 V