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R6000ENHTB1

R6000ENHTB1
图片仅供参考
型号
R6000ENHTB1
制造商
ROHM Semiconductor
分类
MOSFET
RoHS
数据表
描述
MOSFET 600V MOSFET
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产品规格

制造商
ROHM Semiconductor
分类
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOP-8
Packaging
Cut Tape, Reel
Pd - Power Dissipation
2 W
Qg - Gate Charge
4.3 nC
Rds On - Drain-Source Resistance
8.8 Ohms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
5 V

产品类别

Circuit Protection 162,445 产品 Connectors 2,428,639 产品 Electromechanical 556,105 产品 Embedded Solutions 41,129 产品 Enclosures 20,894 产品 Engineering Development Tools 42,996 产品 Industrial Automation 558,346 产品 LED Lighting 77,795 产品 Optoelectronics 109,177 产品 Passive Components 2,996,719 产品 Power 323,117 产品 Semiconductors 567,247 产品 Sensors 70,154 产品 Test & Measurement 23,394 产品

最新评价

发表评价
Teşekkürler
Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Fast shippng. Good quality. I recomend this seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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R600 相关的关键词

  • R6000ENHTB1 集成
  • R6000ENHTB1 RoHS
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  • R6000ENHTB1 数据表
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  • R6000ENHTB1 供应
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  • R6000ENHTB1 图片
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